Yi-Chen Shen

Title: Yi-Chen Shen: Innovator in Schottky Diode Technology

Introduction

Yi-Chen Shen is an inventor based in Xizhou Township, Taiwan. He is known for his innovative work in semiconductor technology, particularly in the development of Schottky diodes. Although he currently holds no granted patents, his contributions to the field are noteworthy.

Latest Patent Applications

Yi-Chen Shen's latest patent application focuses on a Schottky diode with low reverse leakage current and low forward voltage drop. This innovative structure includes a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. Additionally, a plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate, connecting to the metal layer. These second conductive material regions create depletion regions in the first conductive material semiconductor substrate. The formation of these depletion regions effectively reduces the leakage current area of the Schottky diode, thereby minimizing both the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. Conversely, when the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.

Conclusion

Yi-Chen Shen's work in semiconductor technology, particularly with Schottky diodes, showcases his innovative approach to reducing leakage currents and voltage drops. His contributions, although not yet reflected in granted patents, hold promise for advancements in the field.