Bney Aish, Israel

Yevgeniy Kuklin


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Yevgeniy Kuklin: Innovator in Adaptive SRAM Memory Control

Introduction

Yevgeniy Kuklin is a notable inventor based in Bney Aish, Israel. He has made significant contributions to the field of memory technology, particularly through his innovative work on adaptive SRAM memory control. His expertise and creativity have led to advancements that enhance the efficiency of memory-cell operations.

Latest Patents

Yevgeniy holds a patent for an innovative method, system, and product related to adaptive SRAM memory control. This patent involves adapting a value of a delay parameter utilized in the operation of a memory-cell array. The delay parameter influences the ratio between the operation portion of a clock cycle and the pre-charge portion of the clock cycle. The process allows for writing or reading to the memory-cell array during the operation portion while disabling it during the pre-charge portion. The adaptation process includes initializing the delay parameter, writing test data into the memory-cell array, attempting to read from it, comparing the data, and selecting a target value for the delay parameter based on the comparison.

Career Highlights

Yevgeniy Kuklin is currently employed at International Business Machines Corporation (IBM), where he continues to develop innovative solutions in memory technology. His work at IBM has positioned him as a key player in advancing the capabilities of memory systems.

Collaborations

Yevgeniy has collaborated with notable colleagues, including Israel A Wagner and Noam Jungmann. These collaborations have fostered an environment of innovation and have contributed to the development of cutting-edge technologies in the field.

Conclusion

Yevgeniy Kuklin's contributions to adaptive SRAM memory control exemplify his commitment to innovation in technology. His work not only enhances memory operations but also sets a foundation for future advancements in the field.

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