Gangnam-gu, South Korea

Yeon-Jin Mo


Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 46(Granted Patents)


Location History:

  • Gangnam-gu, KR (2011)
  • Seoul, KR (2011)

Company Filing History:


Years Active: 2011

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2 patents (USPTO):Explore Patents

Title: Yeon-Jin Mo: Innovator in Flash Memory Technology

Introduction

Yeon-Jin Mo, based in Gangnam-gu, South Korea, is an accomplished inventor specializing in advancements in flash memory technology. With a focus on improving data recovery methods and garbage collection processes, he holds two patents that contribute to the efficiency and functionality of flash memory devices in modern applications.

Latest Patents

Yeon-Jin Mo's latest patents showcase his innovative approach to enhancing flash memory systems. His first patent, titled "System with Flash Memory Device and Data Recovery Method Thereof," outlines a method for recovering a block mapping table in a flash memory device. This method employs a wear-leveling scheme and involves reading block arrangement information to restore the block mapping table effectively. The procedure includes scanning address allocation information within the spare regions of erased blocks, ensuring that data integrity is maintained.

The second patent, "Flash Memory System and Garbage Collection Method Thereof," presents a novel method for garbage collection in flash memory systems. This method applies a weight to multiple factors to calculate garbage collection costs, enabling the creation of a hash table. By searching for blocks with the lowest garbage collection cost, the method optimizes the garbage collection process, thereby enhancing the overall performance of flash memory systems.

Career Highlights

Currently, Yeon-Jin Mo works at Samsung Electronics Co., Ltd., where he continues to push the boundaries of innovation in semiconductor technology. His contributions to the field have been instrumental in advancing the efficiency of flash memory solutions, making substantial impacts on data storage and retrieval.

Collaborations

Throughout his career, Yeon-Jin Mo has collaborated with talented colleagues, including Jang-Hwan Kim and Dong-Hyun Song. Their teamwork has fostered a dynamic environment for research and development, enabling groundbreaking innovations in the realm of flash memory.

Conclusion

Yeon-Jin Mo's work in the field of flash memory technology exemplifies the spirit of innovation that drives progress in the electronics industry. With his two patents, he has established himself as a key contributor to the ongoing evolution of data storage solutions, paving the way for more efficient and reliable technology in the future.

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