Chung Nam, South Korea

Yeo H Kim

This inventor holds 1 USPTO granted patent. Top assignee: Electronics and Telecommunications Research Institute. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yeo H Kim. Retrieved from https://idiyas.com/inventor/yeo-h-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Yeo H Kim: Innovator in Semiconductor Fabrication

Introduction

Yeo H Kim is a prominent inventor based in Chung Nam, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-speed and high packing density devices. His innovative approach has led to advancements that benefit the electronics industry.

Latest Patents

Yeo H Kim holds a patent for a "Fabrication method for high speed and high packing density semiconductor." This invention describes a fabrication method for a high-speed polysilicon self-aligned bipolar transistor and high packing density CMOS contained on the same wafer. The method emphasizes simplicity in fabrication while achieving high operational speed and packing density.

Career Highlights

Yeo H Kim is affiliated with the Electronics and Telecommunications Research Institute, where he has been instrumental in advancing semiconductor technologies. His work has garnered attention for its potential to enhance device performance and efficiency.

Collaborations

Yeo H Kim has collaborated with notable colleagues, including Kwang Seon Kim and Sang H Chai. Their combined expertise has contributed to the success of various projects within the institute.

Conclusion

Yeo H Kim's innovative contributions to semiconductor fabrication highlight his role as a key figure in the electronics industry. His work continues to influence advancements in technology and improve device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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