Yat-Lung Chau

Title: Yat-Lung Chau: Innovator in Ion Assisted Deposition Processes

Introduction

Yat-Lung Chau is a notable inventor based in Houston, Texas. He has made significant contributions to the field of material science, particularly through his innovative patent related to ion-assisted deposition processes.

Latest Patents

Yat-Lung Chau holds a patent for an "Ion assisted deposition process including reactive source gassification." This process involves depositing a compound of a metal and a reactive gas by heating a metal target in an evacuated chamber to a predetermined reaction temperature. The reaction temperature is carefully controlled to be above a critical temperature, which is higher than about half the melting point of the metal but below the vaporization temperature of the metal target. At this temperature, the metal target reacts with the reactive gas to produce a gaseous compound or sub-compound, which is then reacted with the reactive gas on a substrate to form a solid layer of the compound.

Career Highlights

Yat-Lung Chau is affiliated with the University of Houston System, where he continues to advance research in his field. His work has implications for various applications in material science and engineering.

Collaborations

Some of his notable coworkers include John Charles Wolfe and Wong S Ho, who have collaborated with him on various projects related to his patent.

Conclusion

Yat-Lung Chau's innovative work in ion-assisted deposition processes showcases his expertise and contributions to material science. His patent reflects a significant advancement in the field, demonstrating the potential for new applications and technologies.