Tsukuba, Japan

Yasusi Simada

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi Chemical Company, Ltd.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasusi Simada. Retrieved from https://idiyas.com/inventor/yasusi-simada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 134(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yasusi Simada

Introduction

Yasusi Simada is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on improving the reliability and productivity of semiconductor chip mounting.

Latest Patents

Yasusi Simada holds a patent for a substrate designed for mounting semiconductor chips. This substrate features an adhesive and an insulating coating with an opening in the semiconductor chip mounting area. This design ensures that wiring conductors are not exposed to the substrate surface near the boundary of the mounting area. The innovation enhances connection reliability and supports high mass productivity.

Career Highlights

Simada is associated with Hitachi Chemical Company, Ltd., where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the industry, particularly in the manufacturing processes of semiconductor components.

Collaborations

Some of Yasusi Simada's coworkers include Naoyuki Urasaki and Yoshiyuki Tsuru. Their collaborative efforts have likely played a role in the development of innovative solutions in semiconductor technology.

Conclusion

Yasusi Simada's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and improvement in the field. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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