Yasuo Yoshitomi

Title: Yasuo Yoshitomi: Innovator in MOS Static Type RAM Technology

Introduction

Yasuo Yoshitomi is a notable inventor based in Fucyu, Japan. He has made significant contributions to the field of memory technology, particularly in the development of MOS static type RAM. With a total of 2 patents to his name, his work has had a lasting impact on the efficiency and performance of RAM systems.

Latest Patents

Yasuo Yoshitomi's latest patents focus on an innovative MOS static type RAM that features a variable load. This design includes a memory cell array composed of multiple static type memory cells arranged in a matrix. The system incorporates a plurality of data lines connected to the data input-output terminals of the respective memory cells, along with a series of word lines linked to the selection terminals of these cells. The invention utilizes data line load circuits positioned between the power terminal and the data lines. Each load circuit maintains a relatively high impedance during data write-in operations and switches to a lower impedance during data read-out operations. This variable impedance design enhances the operating speed of the RAM while reducing power consumption.

Career Highlights

Throughout his career, Yasuo Yoshitomi has worked with prominent companies such as Hitachi, Ltd. and Hitachi Microcomputer Engineering Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Yasuo has collaborated with notable colleagues, including Sho Yamamoto and Osamu Minato. Their combined expertise has fostered innovation and development in the field of memory systems.

Conclusion

Yasuo Yoshitomi's contributions to MOS static type RAM technology exemplify his dedication to innovation in the field of electronics. His patents reflect a commitment to improving performance and efficiency in memory systems, making him a significant figure in the industry.