Chigasaki, Japan

Yasuo Mihara

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Yasuo Mihara: Innovator in Ion Implantation Technology

Introduction

Yasuo Mihara is a notable inventor based in Chigasaki, Japan. He has made significant contributions to the field of ion implantation technology, particularly with his innovative designs that enhance the efficiency and effectiveness of ion implanters.

Latest Patents

Mihara holds a patent for a parallel scan type ion implanter. This invention is designed to produce an even and uniform dose distribution across the entire area of the substrate. It achieves this by maintaining a constant moving speed of the ion beam spot on the substrate. The unique feature of this ion implanter is its ability to hold the rate of raising or lowering the deflection voltage stepwise along the vertical direction constant. Additionally, it varies the rate of changing the deflection voltage along the horizontal direction with time, based on the location of the moving beam spot on the substrate.

Career Highlights

Yasuo Mihara is associated with Nihon Shinku Gijutsu Kabushiki Kaisha, where he has been instrumental in advancing ion implantation technologies. His work has been pivotal in improving the precision and reliability of ion implanters used in semiconductor manufacturing.

Collaborations

Mihara has collaborated with notable colleagues such as Osamu Tsukakoshi and Yuzo Sakurada. Their combined expertise has contributed to the development of advanced technologies in the field.

Conclusion

Yasuo Mihara's contributions to ion implantation technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the semiconductor industry positively.

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