Company Filing History:
Years Active: 2012
Title: Inventor Yasumasa Mori: Innovator in Semiconductor Surface Treatments
Introduction
Yasumasa Mori, an esteemed inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor technology. With a focus on enhancing surface treatments for semiconductor devices, Mori's work is critical in advancing the performance and reliability of electronic components.
Latest Patents
Mori holds a patent for a "Surface Treatment Composition, Surface Treatment Method, and Method for Manufacturing Semiconductor Device." This innovative composition is designed for treating metal wiring surfaces on semiconductor substrates. It consists of a unique compound represented by a specific structural formula and a solvent with a boiling point of 50 to 300°C. The composition maintains a pH of 4 to 11, effectively suppressing oxidation of metal wiring and minimizing the deterioration of surface flatness due to unusual oxidation. Additionally, it addresses challenges related to interfacing between metal wiring and insulating or barrier metal films, reducing fang and surface roughness.
Career Highlights
Throughout his career, Yasumasa Mori has gained valuable experience working with prominent companies, including JSR Corporation and Kabushiki Kaisha Toshiba. These roles have enabled him to deepen his expertise in semiconductor technologies and contribute to groundbreaking advancements in the industry.
Collaborations
Mori has worked alongside notable colleagues, such as Hirotaka Shida and Kazuo Kawaguchi. Their collaborative efforts in research and development significantly enhanced the technological landscape in semiconductor manufacturing.
Conclusion
Yasumasa Mori's innovative contributions to semiconductor technology, highlighted by his patent for surface treatment composition, underscore his significant impact on the industry. His work continues to influence advancements in electronic device performance, ensuring that the future of technology remains bright and efficient.