Komatsu, Japan

Yasuhisa Oomuro

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuhisa Oomuro. Retrieved from https://idiyas.com/inventor/yasuhisa-oomuro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yasuhisa Oomuro: Semiconductor Measurement Invention

Introduction

Yasuhisa Oomuro is an inventor associated with Komatsu, Japan. His patent work includes a measurement method and device for estimating the reverse recovery charge of a semiconductor element.

Latest Patents

Oomuro is associated with 1 patent, titled “Measurement Method and Measurement Device.” The invention measures a semiconductor element’s reverse recovery charge under multiple conditions that produce different parasitic inductances. It establishes the relationship between parasitic inductance and the measured charge, then uses that relationship to estimate the true reverse recovery charge at zero parasitic inductance. The semiconductor element includes a diode component.

Career Highlights

Oomuro’s professional affiliations include Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His patent reflects work on improving the accuracy of semiconductor measurements by accounting for parasitic inductance.

Collaborations

The patent’s technical focus connects Oomuro’s work with semiconductor device measurement and characterization. His listed company affiliations include Toshiba organizations.

Conclusion

Yasuhisa Oomuro’s patented method addresses a measurement challenge in semiconductor testing by estimating reverse recovery charge without the influence of parasitic inductance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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