Yasuhiro Nariyoshi

Title: Yasuhiro Nariyoshi: Innovator in Semiconductor Manufacturing

Introduction

Yasuhiro Nariyoshi is a notable inventor based in Kodaira, Japan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 2 patents. His work focuses on improving the reliability and efficiency of semiconductor integrated circuit devices.

Latest Patents

Nariyoshi's latest patents include a method for manufacturing semiconductor integrated circuit devices. This method aims to prevent breakage and separation of wiring, particularly in the bit-line of a DRAM. The process involves depositing a high-density plasma silicon oxide film on wirings using a high-density plasma CVD technique at a first temperature. The structure is then subjected to rapid thermal annealing at a second temperature, which is higher than the first. Via holes are formed in the silicon oxide film, followed by the formation of first and second conductive films. The first conductive film is created in the via holes at a lower temperature, and both conductive layers are polished to remain selectively within the via holes. This innovative approach helps reduce film stress and prevents breakage of the bit-line during heat treatment.

Career Highlights

Throughout his career, Nariyoshi has worked with prominent companies, including Hitachi, Ltd. His experience in the semiconductor industry has allowed him to develop advanced manufacturing techniques that enhance device performance and reliability.

Collaborations

Nariyoshi has collaborated with notable colleagues such as Tsuyoshi Fujiwara and Katsuyuki Asaka. These partnerships have contributed to the advancement of semiconductor technology and innovation.

Conclusion

Yasuhiro Nariyoshi's contributions to semiconductor manufacturing demonstrate his commitment to innovation and excellence in the field. His patents reflect a deep understanding of the challenges in semiconductor technology and provide solutions that enhance device reliability.