Kawasaki, Japan

Yasuhiro Hayashi

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Semiconductor Limited. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuhiro Hayashi. Retrieved from https://idiyas.com/inventor/yasuhiro-hayashi-drom3e8m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Yasuhiro Hayashi: Innovator in Semiconductor Manufacturing

Introduction

Yasuhiro Hayashi is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Yasuhiro Hayashi holds a patent for a manufacturing method of a semiconductor device. This method involves the formation of a first via hole leading to a ferroelectric capacitor structure in an interlayer insulating film through dry etching. Subsequently, a second via hole is created to expose part of the ferroelectric capacitor structure, aligning with the first via hole by wet etching. The result is a via hole constructed by the first and second via holes that communicate with each other.

Career Highlights

Hayashi is currently employed at Fujitsu Semiconductor Limited, where he continues to work on advancing semiconductor technologies. His expertise and innovative approach have positioned him as a valuable asset in the industry.

Collaborations

Yasuhiro collaborates with Kazutoshi Izumi, another skilled professional in the field. Their combined efforts contribute to the ongoing development of cutting-edge semiconductor solutions.

Conclusion

Yasuhiro Hayashi's work in semiconductor manufacturing exemplifies the spirit of innovation. His patent and contributions to Fujitsu Semiconductor Limited highlight his role as a key figure in advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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