Shanghai, China

Yaoqi Dong

This inventor holds 1 USPTO granted patent. Top assignee: Grace Semiconductor Manufacturing Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yaoqi Dong. Retrieved from https://idiyas.com/inventor/yaoqi-dong-cu6tv8og

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Yaoqi Dong: Innovator in Electrically Erasable Programmable Memory

Introduction

Yaoqi Dong is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, particularly with his innovative work on electrically erasable programmable memory (EEPROM). His inventions have the potential to enhance the efficiency and cost-effectiveness of memory production.

Latest Patents

Yaoqi Dong holds a patent for an electrically erasable programmable memory and its manufacturing method. This invention involves forming polysilicon spacer regions above the floating gate, which extend from the central part of the source region. The insulating part between the polysilicon spacer region and the floating gate is designed to have a smaller thickness, thereby increasing the capacitance between them. This design effectively enhances the coupling capacitance at the drain terminal, offering advantages such as low cost and ease of production.

Career Highlights

Yaoqi Dong is currently associated with Grace Semiconductor Manufacturing Corporation. His role at the company allows him to apply his expertise in semiconductor technology and contribute to advancements in memory solutions.

Collaborations

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Conclusion

Yaoqi Dong's innovative work in electrically erasable programmable memory showcases his commitment to advancing memory technology. His contributions are poised to make a significant impact in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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