This inventor holds 1 USPTO granted patent. Top assignee: Helmholtz-Zentrum Dresden-Rossendorf E.v.. Active years: 2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016
Title: Yao Shuai: Innovator in Integrated Non-Volatile Memory Technology
Introduction
Yao Shuai is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of integrated non-volatile memory technology. His innovative work has led to the development of a unique patent that showcases his expertise and creativity.
Latest Patents
Yao Shuai holds a patent for "Integrated non-volatile memory elements, design and use." This patent describes various embodiments of an integrated non-volatile component. The component includes a surface contact with an associated mating contact, wherein a ferroelectric layer is utilized as a conductive channel with variable conductivity. The design allows for the formation of a non-volatile space charge zone in the ferroelectric layer, enhancing the functionality of memory elements.
Career Highlights
Yao Shuai is affiliated with the Helmholtz-Zentrum Dresden-Rossendorf e.V., where he conducts his research and development activities. His work at this esteemed research institution has positioned him as a key figure in advancing memory technology.
Collaborations
Yao has collaborated with notable colleagues, including Heidemarie Schmidt and Shengqiang Zhou. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Yao Shuai's contributions to integrated non-volatile memory technology exemplify his dedication to innovation. His patent and collaborative efforts highlight his role as a leading inventor in this field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
