This inventor holds 1 USPTO granted patent. Top assignee: University of Electronic Science and Technology of China. Active years: 2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020
Title: Yao Qin: Innovator in GaN Power Device Technology
Introduction: Yao Qin, a distinguished inventor based in Chengdu, China, has made significant contributions to the field of power electronics. With a focus on enhancing gate drive circuits for GaN (Gallium Nitride) power devices, Yao's innovative work is paving the way for advancements in power efficiency and circuit performance.
Latest Patents: Yao Qin holds a patent titled "Switch Bootstrap Charging Circuit Suitable for Gate Drive Circuit of GaN Power Device." This invention comprises a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The design features a PMOS transistor as the low-voltage MOSFET, with its source connected to the power supply voltage. The configuration allows the drain of the high-voltage MOSFET to serve as the output terminal. The control modules adeptly generate the necessary gate drive signals for both the low and high-voltage MOSFETs, driven by the signal of the lower power transistor.
Career Highlights: Yao is associated with the University of Electronic Science and Technology of China, where he collaborates with researchers and students to advance the field of electronic engineering. His innovative mindset and expertise in power circuits have contributed to the university's reputation as a leader in technological research and development.
Collaborations: Throughout his career, Yao has worked closely with notable colleagues, including Xin Ming and Li Hu, who share his passion for innovation in electronic devices. Together, they aim to push the boundaries of current technology and explore new applications for GaN power devices.
Conclusion: Yao Qin stands out as a key inventor in the realm of power electronics, particularly with his targeted innovations in gate drive circuits for GaN devices. His contributions not only enhance the efficiency of electronic systems but also exemplify the significant impact of academic research on practical applications in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile