New York, NY, United States of America

Yannick Carll Kimmel

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Microchip Technology Inc.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yannick Carll Kimmel. Retrieved from https://idiyas.com/inventor/yannick-carll-kimmel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovations of Yannick Carll Kimmel

Introduction

Yannick Carll Kimmel is a notable inventor based in New York, NY (US). He has made significant contributions to the field of semiconductor manufacturing. His innovative work focuses on enhancing plasma etch processes, which are crucial in the production of semiconductor devices.

Latest Patents

Yannick holds a patent for a "Single-wafer real-time etch rate and uniformity predictor for plasma etch processes." This patent describes a real-time method for qualifying the etch rate during plasma etch processes. The method involves depositing a film on a substrate of a wafer, followed by a series of steps to ensure the etch process is effective and meets predetermined tolerances.

Career Highlights

Yannick is currently employed at Microchip Technology Inc., where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in improving the efficiency and reliability of plasma etch processes.

Collaborations

Yannick collaborates with talented individuals such as Justin Sato and Brian Dee Hennes. Their combined expertise contributes to the advancement of technology in their field.

Conclusion

Yannick Carll Kimmel's contributions to semiconductor manufacturing through his innovative patent demonstrate his commitment to advancing technology. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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