Company Filing History:
Years Active: 2014
Title: Yanlei Ping: Innovator in Semiconductor Technology
Introduction
Yanlei Ping is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of materials and methods for enhancing NMOS transistors.
Latest Patents
Yanlei Ping holds a patent for a metal silicide layer and NMOS transistor fabrication method. This innovative patent describes exemplary embodiments that provide materials and methods for forming a metal silicide layer and/or an NMOS transistor. The process involves heating a metal layer containing at least a tellurium element on a semiconductor substrate. The resulting metal silicide layer incorporates the tellurium element, which helps reduce the Schottky barrier height between the metal silicide layer and the underlying semiconductor substrate. This advancement also contributes to a reduction in contact resistance of the NMOS transistor. Yanlei Ping has 1 patent to his name.
Career Highlights
Yanlei Ping is associated with Semiconductor Manufacturing International Corporation, a leading company in the semiconductor industry. His work focuses on improving the efficiency and performance of semiconductor devices through innovative materials and methods.
Collaborations
Throughout his career, Yanlei Ping has collaborated with notable colleagues, including Haibo Xiao and Wayne Bao. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Yanlei Ping's contributions to semiconductor technology, particularly through his patented methods for NMOS transistors, highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor manufacturing and device performance.