Yangping Ding

Title: Innovations of Yangping Ding in Semiconductor Technology

Introduction

Yangping Ding is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage MOSFETs. His innovative approach has led to advancements that enhance the performance and efficiency of power devices.

Latest Patents

Yangping Ding holds a patent for a process method and structure for high voltage MOSFETs. This patent describes a semiconductor power device formed in a semiconductor substrate that includes a plurality of trenches. These trenches are formed at the top portion of the semiconductor substrate and extend laterally across it along a longitudinal direction. Each trench features a nonlinear portion, with a trench sidewall that is perpendicular to the longitudinal direction. Additionally, a plurality of trench bottom dopant regions are formed below the trench bottom surface, and a sidewall dopant region extends vertically downward along the perpendicular sidewall to connect with the trench bottom dopant region.

Career Highlights

Yangping Ding is currently employed at Alpha & Omega Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing technologies that improve the efficiency and reliability of power devices.

Collaborations

Yangping has collaborated with several talented individuals in his field, including Sik Lui and Madhur Bobde. These collaborations have fostered an environment of innovation and creativity, leading to advancements in semiconductor technology.

Conclusion

Yangping Ding's contributions to the field of semiconductor technology, particularly through his patent on high voltage MOSFETs, highlight his role as a key innovator. His work at Alpha & Omega Semiconductor Corporation and collaborations with other professionals further emphasize his impact on the industry.