Yangkui Lin

Title: Yangkui Lin: Innovator in NMOS Transistor Fabrication

Introduction

Yangkui Lin is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of NMOS transistors. His innovative methods have the potential to enhance the performance and efficiency of electronic devices.

Latest Patents

Yangkui Lin holds a patent for a method for fabricating an NMOS transistor. This method includes providing a substrate, forming a gate dielectric layer structure on the substrate, and creating a gate electrode on the gate dielectric layer structure. The process further involves performing a fluorine ion implantation below the gate dielectric layer and conducting an annealing process in an atmosphere comprising hydrogen or hydrogen plasma. Additionally, the method includes forming a source region and a drain region on both sides of the gate electrode before or after the fluorine ion implantation. This innovative approach is crucial for advancing semiconductor manufacturing techniques.

Career Highlights

Yangkui Lin is currently employed at Semiconductor Manufacturing International Corporation, where he continues to develop cutting-edge technologies in semiconductor fabrication. His work has been instrumental in improving the efficiency and reliability of NMOS transistors, which are widely used in various electronic applications.

Collaborations

Yangkui Lin collaborates with fellow inventor Zhihao Chen, contributing to advancements in semiconductor technology. Their combined expertise fosters innovation and drives progress in the field.

Conclusion

Yangkui Lin's contributions to the fabrication of NMOS transistors exemplify his commitment to innovation in semiconductor technology. His patent and ongoing work at Semiconductor Manufacturing International Corporation highlight his role as a key player in advancing electronic device performance.