The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jun. 28, 2011
Applicants:
Yangkui Lin, Shanghai, CN;
Zhihao Chen, Shanghai, CN;
Inventors:
Yangkui Lin, Shanghai, CN;
Zhihao Chen, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating an NMOS transistor includes providing a substrate; forming a gate dielectric layer structure on the substrate and forming a gate electrode on the gate dielectric layer structure. The method further includes performing a fluorine ion implantation below the gate dielectric layer and an annealing process in an atmosphere comprising hydrogen or hydrogen plasma. The method also includes forming a source region and a drain region on both sides of the gate electrode before or after the fluorine ion implantation.