Company Filing History:
Years Active: 2017-2020
Title: Innovations of Yanghui Sun in High-Voltage Device Technology
Introduction
Yanghui Sun is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of high-voltage devices, particularly through his innovative patents. With a total of two patents to his name, Sun's work focuses on enhancing the reliability and efficiency of high-voltage devices in semiconductor technology.
Latest Patents
One of Yanghui Sun's latest patents is titled "Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process." This invention provides an isolation structure that includes a semiconductor substrate with a first type of doping and an epitaxial layer with a second type of doping. The isolation region extends through the epitaxial layer into the semiconductor substrate, effectively isolating the epitaxial island where the BCD high-voltage device is located. This innovation increases the breakdown voltage of the high-voltage device, ensuring that the parasitical threshold voltage between the aluminum wiring and the silicon surface can exceed 1200V. This advancement improves the planarization of oxide layer steps on the silicon surface throughout the high-voltage BCD process, thereby enhancing product reliability.
Career Highlights
Yanghui Sun has worked with prominent companies in the semiconductor industry, including Hangzhou Silan Integrated Circuit Co., Ltd. and Hangzhou Silan Microelectronics Co., Ltd. His experience in these organizations has contributed to his expertise in high-voltage device technology.
Collaborations
Throughout his career, Yanghui Sun has collaborated with notable colleagues such as Yongxiang Wen and Shaohua Zhang. These collaborations have likely fostered innovation and development in their respective fields.
Conclusion
Yanghui Sun's contributions to high-voltage device technology through his patents demonstrate his commitment to advancing semiconductor innovations. His work not only enhances device reliability but also pushes the boundaries of what is possible in high-voltage applications.