Incheon, South Korea

Yang-Soo Sung

This inventor holds 1 USPTO granted patent. Top assignee: Lg Semicon. Active years: 1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yang-Soo Sung. Retrieved from https://idiyas.com/inventor/yang-soo-sung-9lzp9gqf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: Innovations of Yang-Soo Sung

Introduction

Yang-Soo Sung is a notable inventor based in Inchon, South Korea. He has made significant contributions to the field of electronics, particularly in the area of input protection circuits. His work is recognized for its innovative approach to safeguarding internal circuits from electro-static charges.

Latest Patents

Yang-Soo Sung holds a patent for an input protection circuit. This circuit is designed to protect internal circuits by forming multiple discharge loops. It connects each input pad via an input protection circuit, which includes a plurality of pads formed on a P well within a substrate. The design features first discharge paths formed between neighboring pads and a second discharge path connecting the pads to circuit ground. This innovative approach enhances the reliability and durability of electronic devices.

Career Highlights

Yang-Soo Sung is currently associated with LG Semicon, a leading company in the semiconductor industry. His role at LG Semicon allows him to apply his expertise in developing advanced electronic solutions. His contributions have been instrumental in improving the performance and safety of electronic components.

Conclusion

Yang-Soo Sung's work in developing input protection circuits showcases his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in protecting electronic devices from potential damage caused by electro-static charges.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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