Tainan Hsien, Taiwan

Yang-Hui Fang


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Yang-Hui Fang: Innovator in Semiconductor Technology

Introduction

Yang-Hui Fang is a prominent inventor based in Tainan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of shallow trench isolation (STI) fabrication. His innovative methods have paved the way for advancements in integrated circuit manufacturing.

Latest Patents

Yang-Hui Fang holds a patent for a "Method of forming shallow trench isolation." This patent describes a process for fabricating shallow trench isolations that involves creating a substrate with a patterned first oxide layer and a patterned silicon nitride layer. The method defines active regions with openings formed between them, which are then over etched to create trenches for STI fabrication. A second oxide layer is formed to conform to the trench profile, followed by a third oxide layer that is globally applied. A thermal process is utilized to densify part of the third oxide layer, resulting in a harder top portion compared to the lower section. The excessive third oxide layer above the silicon nitride layer is removed through chemical mechanical polishing, completing the STI manufacturing process.

Career Highlights

Yang-Hui Fang is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices. His innovative approaches have contributed to the company's reputation for excellence in technology.

Collaborations

Yang-Hui Fang has collaborated with notable colleagues, including Kan-Yuan Lee and Joe Ko. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Yang-Hui Fang's contributions to semiconductor technology, particularly through his patent on shallow trench isolation, highlight his role as a key innovator in the industry. His work continues to influence advancements in integrated circuit manufacturing, showcasing the importance of innovation in technology.

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