Yan Jin is a notable inventor based in Wuxi, China. He has made significant contributions to the field of flash device technology, holding a total of 3 patents. His work focuses on the manufacturing methods and structures of flash devices, showcasing his expertise in semiconductor technology.

Latest Patents

Yan Jin's latest patents include a flash device and a manufacturing method thereof. The first patent describes a method that involves providing a substrate and forming a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer on the substrate. This innovative approach enhances the performance and reliability of flash devices. The second patent outlines a comprehensive manufacturing method for a flash device, detailing the sequential formation of various layers and the etching processes required to create efficient flash memory structures.

Career Highlights

Throughout his career, Yan Jin has worked with prominent companies in the semiconductor industry, including CSMC Technologies Fab2 Co., Ltd. and CSMC Technologies Fab1 Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in flash memory.

Collaborations

Yan Jin has collaborated with talented individuals in his field, including Song Zhang and Zhibin Liang. These partnerships have fostered innovation and have been instrumental in advancing their shared goals in technology development.

Conclusion

Yan Jin's contributions to the field of flash device technology are noteworthy, and his patents reflect his innovative spirit and technical expertise. His work continues to influence the semiconductor industry, paving the way for future advancements.

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