Yan-An Lin

Title: Yan-An Lin: Innovator in Memory Storage Technology

Introduction

Yan-An Lin is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory storage technology. His innovative work has led to the development of a unique patent that enhances the efficiency of memory devices.

Latest Patents

Yan-An Lin holds a patent for a "Clock adjusting circuit, memory storage device, and memory control circuit unit." This invention includes a memory storage device, a memory control circuit unit, and a clock adjusting circuit arranged across multiple layers. The clock adjusting circuit features a detection circuit, a control voltage generating circuit, and a voltage-controlled oscillator (VCO). The detection circuit identifies signal characteristic differences between input and output signals to produce a first signal. The control voltage generating circuit, connected to the detection circuit, generates a control voltage based on this first signal. The VCO, which includes an inductor and a capacitor, receives the control voltage and oscillates according to the impedance characteristics of the inductor and capacitor, thereby generating the output signal. This innovative design helps reduce manufacturing costs.

Career Highlights

Yan-An Lin is currently employed at Phison Electronics Corporation, a leading company in the field of memory solutions. His work at Phison has allowed him to focus on advancing memory technology and contributing to the company's innovative projects.

Collaborations

Yan-An Lin collaborates with his coworker, Wei-Yung Chen, to further enhance their research and development efforts in memory technology.

Conclusion

Yan-An Lin's contributions to memory storage technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work not only improves the efficiency of memory devices but also reduces manufacturing costs, showcasing the impact of his inventions.