This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ya-Jui Tsou and Spin-Orbit Torque MRAM Innovation.
Introduction
Ya-Jui Tsou is an inventor based in Hsinchu, Taiwan. Her patent work includes a magnetic tunnel junction technology related to spin-orbit torque magnetic random-access memory (SOT-MRAM).
Latest Patents
Tsou is associated with 1 patent: “Magnetic Tunnel Junction Structures and Related Methods.” The disclosure describes an SOT-MRAM channel made with multiple heavy-metal layers and dielectric dusting layers placed between adjacent heavy-metal layers. The dielectric material appears as discrete molecules or clusters scattered in or near the interfaces between those layers.
Career Highlights
Tsou is associated with Taiwan Semiconductor Manufacturing Co., Ltd. Her patent contribution focuses on materials and structures for SOT-MRAM devices.
Collaborations
The provided information identifies Zong-You Luo and I-Cheng Tung as Tsou’s coworkers. Their names are associated with her professional context, though specific roles in the patent are not stated.
Conclusion
Ya-Jui Tsou’s recorded patent work addresses layered SOT-MRAM structures, highlighting an approach to engineering interfaces between heavy-metal layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile