Company Filing History:
Years Active: 2000
Title: Y T Lin - Innovator in Flash Memory Technology
Introduction
Y T Lin is a prominent inventor based in Hsinchu, Taiwan. He is known for his significant contributions to the field of memory devices, particularly in the development of advanced flash memory technologies. His innovative work has led to the filing of a patent that enhances the efficiency and performance of floating gate memory devices.
Latest Patents
Y T Lin holds a patent for a technology titled "Parallel read and verify for floating gate memory device." This invention focuses on a page mode flash memory or floating gate memory device that incorporates a page buffer based on low current bit latches. The device is designed to facilitate parallel read and parallel program verify operations, which helps avoid data conflicts. The circuitry includes features that isolate operations and utilize a diode type device to manage signal conditions effectively. Additionally, the invention employs bit-by-bit precharging of the bit lines to conserve power, showcasing Lin's commitment to energy-efficient technology.
Career Highlights
Y T Lin is associated with Macronix International Co., Ltd., a leading company in the semiconductor industry. His work at Macronix has allowed him to push the boundaries of memory technology, contributing to the company's reputation for innovation and excellence in the field.
Collaborations
Throughout his career, Y T Lin has collaborated with talented individuals such as Yu-Ming Hsu and Yin-Shang Liu. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Y T Lin's contributions to the field of flash memory technology exemplify his innovative spirit and dedication to advancing memory device capabilities. His patent reflects a significant step forward in the efficiency of floating gate memory devices, marking him as a key figure in the industry.