Company Filing History:
Years Active: 2025
Title: Innovations of Xujiao Gao in Vertical Tunneling Field-Effect Transistors
Introduction
Xujiao Gao is an accomplished inventor based in Albuquerque, NM. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical tunneling field-effect transistors. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.
Latest Patents
Xujiao Gao holds a patent for a "Vertical tunneling field-effect transistor with enhanced current confinement." This invention provides a method for manufacturing a vertical tunneling field-effect transistor, which includes the formation of oppositely doped source and drain regions. The patent details the creation of an APAM delta layer in the transistor substrate, which is positioned beneath a metal gate and in electrical contact with the source region. A dielectric layer is interposed between the substrate surface and the metal gate, while an epitaxial cap layer is placed directly over the APAM layer, forming a dielectric layer interface. This design allows for a vertical channel that facilitates tunneling between the APAM delta layer and an induced conduction channel, enhancing the transistor's performance.
Career Highlights
Xujiao Gao is currently employed at National Technology & Engineering Solutions of Sandia, LLC. His role at this esteemed organization allows him to further his research and development efforts in advanced semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
Xujiao Gao has collaborated with notable colleagues, including Tzu-Ming Lu and Evan Michael Anderson. These partnerships have contributed to the advancement of their collective research and innovation efforts in the field of semiconductor technology.
Conclusion
Xujiao Gao's contributions to the field of vertical tunneling field-effect transistors exemplify his innovative spirit and technical expertise. His patent and ongoing work at National Technology & Engineering Solutions of Sandia, LLC highlight his commitment to advancing semiconductor technology.