Xuewei Feng

Title: Xuewei Feng: Inventor of a Self-Selective Memtransistor

Introduction

Xuewei Feng is an inventor associated with the National University of Singapore. His work includes a patent for a multi-terminal memtransistor designed for crossbar array circuits. The supplied information lists 1 patent for Feng.

Latest Patents

Feng’s listed patent, “Self-selective multi-terminal memtransistor for crossbar array circuits,” describes a device built on a sapphire substrate with a single-layer polycrystalline molybdenum disulphide (MoS₂) thin film. The film’s MoS₂ grains are oriented along terraces on the substrate surface.

The device has source and drain electrodes that define a channel in the MoS₂ film. A gate electrode sits above the channel and is separated from it by a gate dielectric layer. The design is intended for use in crossbar array circuits.

Career Highlights

The available information connects Feng’s inventive work with the National University of Singapore. His listed patent focuses on a memtransistor architecture that combines a thin-film material structure with multiple terminals.

Collaborations

Feng’s listed coworker is Kah Wee Ang. The supplied information identifies Ang as a woman but does not specify her role in the patent or the nature of their collaboration.

Conclusion

Xuewei Feng’s listed invention presents a self-selective multi-terminal memtransistor concept for crossbar array circuits, developed in connection with the National University of Singapore.