Nanjing, China

Xuejun Yan

This inventor holds 1 USPTO granted patent. Top assignee: Nanjing University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xuejun Yan. Retrieved from https://idiyas.com/inventor/xuejun-yan-56m0uwmf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Xuejun Yan and Thermal Boundary Conductance Regulation.

Introduction

Xuejun Yan is an inventor associated with Nanjing University in Nanjing, China. His listed patent work concerns controlling heat transfer across the boundary between a metal and an insulator.

Latest Patents

Yan is credited with 1 patent, titled “Method for Regulating Thermal Boundary Conductance Between Metal and Insulator.” The method places a metal on an insulator’s surface and regulates thermal boundary conductance by changing an external electric field or applied stress for a ferroelectric, applying stress to a piezoelectric, or adjusting the temperature of a pyroelectric. For the ferroelectric and piezoelectric approaches, the method can vary the magnitude or direction of the applied field or stress relative to the boundary.

Career Highlights

The described invention focuses on using the electrical, mechanical, or temperature-responsive properties of selected insulating materials to adjust heat transfer at a metal–insulator interface. This approach may offer a way to tune thermal boundary conductance through controlled external conditions.

Collaborations

Yuefeng Nie and Yipeng Zang are identified as Yan’s coworkers. The available information does not specify their roles in the patent or their particular contributions.

Conclusion

Xuejun Yan’s listed patent presents a method for regulating heat flow across metal–insulator boundaries by using responsive materials and adjustable external conditions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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