Beijing, China

Xueheng Zheng

This inventor holds 1 USPTO granted patent. Top assignee: Beijing University of Technology. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xueheng Zheng. Retrieved from https://idiyas.com/inventor/xueheng-zheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Innovations of Xueheng Zheng in Power Electronics

Introduction

Xueheng Zheng is a notable inventor based in Beijing, China. He has made significant contributions to the field of power electronics, particularly in the measurement of fretting displacement in power cycling applications.

Latest Patents

One of his key patents is titled "Device and method for measuring fretting displacement in power cycle of press-pack IGBT." This invention discloses a device and method for accurately measuring fretting displacement in the power cycling of a press-pack insulated gate bipolar transistor (IGBT). The IGBT includes a bracket, slide bars that are slidably mounted on the bracket and arranged in a circumferential direction, sensors installed on both the bracket and slide bars, and a power cycling experiment device located inside the bracket. This innovation enhances the reliability and efficiency of power electronic systems.

Career Highlights

Xueheng Zheng is affiliated with the Beijing University of Technology, where he continues to advance research in power electronics. His work has garnered attention for its practical applications in improving the performance of IGBTs, which are crucial components in various electronic devices.

Collaborations

He collaborates with talented colleagues, including Tong An and Rui Zhou, who contribute to his research endeavors and innovations in the field.

Conclusion

Xueheng Zheng's contributions to power electronics, particularly through his patented innovations, demonstrate his commitment to advancing technology in this critical area. His work not only enhances the understanding of IGBT performance but also paves the way for future advancements in power electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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