Tsukuba, Japan

Xue-Lun Wang


Average Co-Inventor Count = 1.3

ph-index = 2

Forward Citations = 72(Granted Patents)


Company Filing History:


Years Active: 2000-2011

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2 patents (USPTO):Explore Patents

Title: Xue-Lun Wang: Innovator in Semiconductor Technology

Introduction

Xue-Lun Wang is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting diodes and atomic layer growth methods. With a total of two patents to his name, Wang's work has had a notable impact on the industry.

Latest Patents

Wang's latest patents include a III-V group compound semiconductor light-emitting diode. This invention features a substrate with multiple crystal planes and a grown layer formed through epitaxial growth. The active layer of the grown layer contains several crystal planes, each with different bandgap energies, enhancing the diode's performance. Another significant patent is a method for growing Group III atomic layers, which is crucial for fabricating semiconductor quantum nanostructures. This method allows for precise control over the growth of atomic layers, optimizing the semiconductor's properties.

Career Highlights

Throughout his career, Xue-Lun Wang has worked with notable organizations, including the Agency of Industrial Science and Technology and the National Institute of Advanced Industrial Science and Technology. His expertise in semiconductor technology has positioned him as a key figure in advancing research and development in this field.

Collaborations

Wang has collaborated with various professionals, including Mutsuo Ogura, to further enhance his research and innovations. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Xue-Lun Wang's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in light-emitting diodes and atomic layer growth methods.

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