The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jan. 11, 2007
Applicant:
Xue-lun Wang, Tsukuba, JP;
Inventor:
Xue-Lun Wang, Tsukuba, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A III-V group compound semiconductor light-emitting diode, containing a substratehaving plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layerandand an active layer, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrodefor current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.