Guangdong, China

Xue Li

This inventor holds 1 USPTO granted patent. Top assignee: Tcl Technology Group Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xue Li. Retrieved from https://idiyas.com/inventor/xue-li-v2agyafx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Xue Li: Innovator in Quantum Dot Light-Emitting Diodes

Introduction

Xue Li is a prominent inventor based in Guangdong, China. She has made significant contributions to the field of quantum dot technology, particularly in the development of electron barrier films for light-emitting diodes. Her innovative work has the potential to enhance the performance and stability of quantum dot light-emitting diodes.

Latest Patents

Xue Li holds a patent for an "Electron barrier film, quantum dot light-emitting diode and preparation method thereof." This invention includes a compound with a general formula R—Si(OR), which serves as a raw material for forming the electron barrier film. The technology allows for the adjustment of the rate of injecting electrons into the luminescent layer, ensuring that the number of electron holes equals the number of electrons. This improvement enhances the recombination efficiency of electrons and electron holes, leading to better overall performance and stability of quantum dot light-emitting diodes.

Career Highlights

Xue Li is currently associated with TCL Technology Group Corporation, where she continues to push the boundaries of innovation in her field. Her work has garnered attention for its practical applications and potential impact on the electronics industry.

Conclusion

Xue Li's contributions to quantum dot technology exemplify the importance of innovation in advancing electronic devices. Her patented work not only improves the efficiency of light-emitting diodes but also sets a foundation for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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