Company Filing History:
Years Active: 2021
Title: Xudong Feng: Innovator in GaN Power Device Technology
Introduction
Xudong Feng is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of power electronics, particularly in the development of GaN (Gallium Nitride) power devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this advanced technology.
Latest Patents
Xudong Feng holds a patent for a "Segmented direct gate drive circuit of a depletion mode GaN power device." This invention involves a unique method of charging the gate voltage of a GaN power device. The process begins by charging the gate voltage from a negative voltage turn-off level to the threshold voltage of the device. Once the gate voltage reaches the threshold, a current mirror charging module activates a limited number of charging current mirror modules. This allows the gate voltage to transition from the threshold to a Miller platform voltage, and subsequently to a zero level.
Career Highlights
Xudong Feng is affiliated with the University of Electronic Science and Technology of China, where he continues to advance research in power electronics. His work is characterized by a strong focus on innovation and practical applications of GaN technology. His contributions have not only enhanced the understanding of power devices but have also paved the way for more efficient electronic systems.
Collaborations
Xudong Feng collaborates with notable colleagues such as Xin Ming and Bo Zhang. Their combined expertise fosters a dynamic research environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Xudong Feng's contributions to the field of GaN power devices exemplify the spirit of innovation in modern electronics. His patent and ongoing research efforts highlight the importance of advancements in power technology for future applications.