Xuan Xie

Title: Xuan Xie: Innovator in Superjunction Structure Manufacturing

Introduction

Xuan Xie is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative methods.

Latest Patents

Xuan Xie holds a patent for a "Method of manufacturing superjunction structure." This invention outlines a process that includes several steps: first, growing an N type epitaxial layer on a substrate with a (100) or (110) oriented surface; second, etching the N type epitaxial layer to create trenches; and third, filling these trenches with P type epitaxial growth using a mixture of silicon source gas, halide gas, hydrogen gas, and doping gas. This method ensures that no voids or only small voids are formed in the trenches after filling.

Career Highlights

Throughout his career, Xuan Xie has worked with prominent companies such as Shanghai Hua Hong NEC Electronics Company Limited and Henkel AG & Company, KGaA. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Xuan Xie has collaborated with notable colleagues, including Jiquan Liu and Jian Li. Their combined efforts have further advanced the field of semiconductor manufacturing.

Conclusion

Xuan Xie's innovative approach to manufacturing superjunction structures has positioned him as a key figure in the semiconductor industry. His contributions continue to influence advancements in technology.