Beijing, China

Xiukai Lan

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Chinese Academy of Sciences. Active years: 2025.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Xiukai Lan: Innovator in Spin-Orbit Torque Magnetoresistive Random Access Memory

Introduction

Xiukai Lan is a prominent inventor based in Beijing, China. He is known for his significant contributions to the field of memory technology, particularly in the development of advanced memory systems. His innovative work has led to the creation of a unique type of memory that enhances data storage capabilities.

Latest Patents

Xiukai Lan holds a patent for a groundbreaking invention titled "Spin-orbit torque magnetoresistive random access memory and method of operating the same." This patent describes a memory system that includes memory cells designed to improve data storage efficiency. Each memory cell features an orbital Hall layer that generates an orbital polarized current, along with an alloy material layer that produces spin polarized currents. The design incorporates a magnetic tunnel junction, which facilitates deterministic magnetization switching, allowing for effective information storage.

Career Highlights

Xiukai Lan is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced memory technologies. His work has garnered attention for its potential applications in next-generation computing systems. With a focus on innovative solutions, he continues to push the boundaries of memory technology.

Collaborations

Xiukai Lan collaborates with notable colleagues, including Kaiyou Wang and Zelalem Abebe Bekele. These partnerships enhance the research and development efforts within the field, fostering innovation and progress.

Conclusion

Xiukai Lan's contributions to the field of memory technology exemplify the spirit of innovation. His patented work on spin-orbit torque magnetoresistive random access memory represents a significant advancement in data storage solutions. Through his research and collaborations, he continues to influence the future of memory technology.

Profile summary based on public USPTO records.
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