Heverlee, Belgium

Xiuju Zhou

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Imec Vzw. Active years: 2020.

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2020

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Xiuju Zhou: Innovator in Semiconductor Structures

Introduction

Xiuju Zhou is a notable inventor based in Heverlee, Belgium. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for forming semiconductor structures.

Latest Patents

Xiuju Zhou holds 1 patent for his invention titled "Method for forming a semiconductor structure and a semiconductor structure manufactured thereof." This patent describes a method that includes providing a monocrystalline substrate with a masking layer. The method involves filling an opening in the masking layer by epitaxially growing a first layer of a Group III-nitride compound. The process allows for the growth of the first layer in a direction that enhances the semiconductor structure's properties.

Career Highlights

Xiuju Zhou is currently associated with Imec Vzw, a leading research and innovation hub in nanoelectronics and digital technologies. His work at Imec has positioned him as a key player in advancing semiconductor technologies. Zhou's expertise in this area has been instrumental in developing new methodologies that improve semiconductor performance.

Collaborations

Xiuju Zhou collaborates with talented professionals in his field, including Hu Liang and Geert Eneman. These collaborations enhance the research and development efforts at Imec, fostering innovation and technological advancement.

Conclusion

Xiuju Zhou's contributions to semiconductor technology through his innovative patent and work at Imec Vzw highlight his role as a significant inventor in the field. His ongoing efforts continue to shape the future of semiconductor structures.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…