Huizhou, China

Xiongfeng Lin

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Tcl Technology Group Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiongfeng Lin. Retrieved from https://idiyas.com/inventor/xiongfeng-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Xiongfeng Lin: Inventor in Light-Emitting Device Technology

Introduction

Xiongfeng Lin is an inventor based in Huizhou, China, associated with TCL Technology Group Corporation. His patent work includes a design intended to help prevent current leakage in light-emitting devices.

Latest Patents

The provided information lists one patent for Lin: “Light-Emitting Devices and Manufacturing Method Thereof.” The patent describes a device comprising a first electrode, functional layers, a patterned insulating layer, a patterned second electrode, and a light-emitting layer, along with methods for manufacturing the device. Its arrangement places the second electrode’s projected area within the insulating layer’s projected area, helping prevent contact between the second functional layer and the first functional layer and thereby reducing the risk of current leakage.

Career Highlights

Lin’s listed patent reflects work on the structure and manufacture of light-emitting devices. The disclosed electrode and insulating-layer arrangement addresses electrical isolation within the device.

Collaborations

Lin is associated with TCL Technology Group Corporation. The provided information does not specify collaborators or further details about his role at the company.

Conclusion

Xiongfeng Lin’s listed invention focuses on a light-emitting device design that aims to reduce current leakage through careful positioning of its patterned electrode and insulating layer.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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