Huizhou, China

Xingyuan Ma

This inventor holds 1 USPTO granted patent. Top assignee: Tcl Technology Group Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xingyuan Ma. Retrieved from https://idiyas.com/inventor/xingyuan-ma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Xingyuan Ma

Introduction

Xingyuan Ma is a prominent inventor based in Huizhou, China. He has made significant strides in the field of nanomaterials, particularly in the development of quantum dot light-emitting diodes. His work has garnered attention for its potential applications in various technological advancements.

Latest Patents

Xingyuan Ma holds a patent for a nanomaterial that includes a core and an outer shell. The core consists of ZnO nanoparticles with a metal element doped within them, while the outer shell is made of a metal oxide. This innovative approach enhances the performance of quantum dot light-emitting diodes, showcasing his expertise in nanotechnology.

Career Highlights

Xingyuan Ma is associated with TCL Technology Group Corporation, a leading company in the electronics industry. His role at TCL has allowed him to contribute to cutting-edge research and development projects, further establishing his reputation as an inventor.

Collaborations

Throughout his career, Xingyuan Ma has collaborated with notable colleagues, including Wei Xu and Jianxin Zhang. These partnerships have facilitated the exchange of ideas and fostered innovation in their respective fields.

Conclusion

Xingyuan Ma's contributions to nanomaterials and quantum dot technology highlight his role as a key inventor in the industry. His work continues to influence advancements in technology and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…