Shanghai, China

Xingxing Sun

This inventor holds 1 USPTO granted patent. Top assignee: Changshu 3F Zhonghao New Chemical Materials Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xingxing Sun. Retrieved from https://idiyas.com/inventor/xingxing-sun-8axtv13f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Xingxing Sun and Gas Separation Membrane Innovation.

Introduction

Xingxing Sun is an inventor based in Shanghai, China. His patent work concerns gas separation membranes and their preparation and use.

Latest Patents

The provided information lists one patent for Sun: “Gas Separation Membrane, and Preparation Method Therefor and Use Thereof.” The invention describes a membrane comprising 60–100 mol% of monomeric units derived from α,β,β-trifluorostyrene, with an intrinsic viscosity of 0.5–5.0 dL/g and a tensile strength of at least 50 MPa. Under the GB/T 1038-2000 test method, the membrane’s hydrogen permeability coefficient is at least 100 barrer. Sun is credited with 1 patent in the information provided.

Career Highlights

Sun is associated with Changshu 3F Zhonghao New Chemical Materials Co., Ltd. His listed patent reflects work on membrane materials designed for gas separation, including hydrogen permeability and mechanical strength.

Collaborations

The provided information names Shuyu Liu and Bo Huang as Sun’s coworkers. Their specific roles in the patent or related research are not specified.

Conclusion

Xingxing Sun’s listed patent focuses on a fluorinated polymer gas separation membrane with defined strength, viscosity, and hydrogen permeability properties.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…