Company Filing History:
Years Active: 2022-2025
Title: Xingsheng Wang: Innovator in Phase-Change Memory Technology
Introduction
Xingsheng Wang is a prominent inventor based in Hubei, China. He has made significant contributions to the field of phase-change memory technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of memory devices, which are crucial in modern computing.
Latest Patents
Wang's latest patents include innovative designs that improve the functionality of phase-change memory systems. One of his notable inventions is a high-speed and large-current adjustable pulse circuit, which features a clamping structure, a current mirror structure, and a leakage current shutdown structure. This invention allows for the generation of a reference current and an output current that is proportional to it, while also minimizing leakage current when pulses are not in use.
Another significant patent is the read and write circuit of three-dimensional phase-change memory. This circuit includes an operation control circuit and a read and write operation circuit that work in tandem. The operation control circuit ensures that the correct operation pulse is loaded onto the read and write operation circuit, which then interacts with the memory cell to facilitate accurate data storage and retrieval.
Career Highlights
Xingsheng Wang is affiliated with Huazhong University of Science and Technology, where he continues to advance research in memory technologies. His academic background and innovative spirit have positioned him as a key figure in the development of next-generation memory solutions.
Collaborations
Wang collaborates with talented colleagues such as Xiangshui Miao and Fan Yang. Together, they contribute to the ongoing research and development efforts in their field, pushing the boundaries of what is possible in memory technology.
Conclusion
Xingsheng Wang's contributions to phase-change memory technology exemplify the innovative spirit of modern inventors. His patents not only enhance the efficiency of memory devices but also pave the way for future advancements in the field.