Huazhong University of Science and Technology

Xingsheng Wang

Xiangshui Miao

Fan Yang

Chengxu Wang

Lingjun Zhou

Yinghao Ma

Menghua Huang

Enming Huang

Qiwen Wu

Yujie Song

A high-speed and large-current adjustable pulse circuit, an operating circuit and an operating method of a phase-change memory are provided. The high-speed and large-current adjustable pulse circuit is provided with a clamping structure, a current mirror structure and a leakage current shutdown structure. The clamping structure including a clamping operational amplifier and a first MOS transistor is configured to generate a reference current. The current mirror structure is configured to generate an output current proportional to the reference current. The leakage current shutdown structure is configured to turn off the current mirror structure and reduce leakage current when pulse disappear. In this way, a device with an adjustable current and a reduced leakage current is realized.

High-speed and large-current adjustable pulse circuit, operating circuit and operating method of phase-change memory

A read and write circuit of a three-dimensional phase-change memory including an operation control circuit and a read and write operation circuit connected to each other. The operation control circuit is configured to load a correct operation pulse onto the read and write operation circuit. A read and write unit in the read and write operation circuit is connected to a memory cell and is configured to load the correct operation pulse onto the memory cell corresponding to the three-dimensional phase-change memory and to mirror the correct operation pulse to a mirror current. A bandgap reference source and a hysteresis comparator are connected to a mirror circuit branch. A feedback chopper circuit loop is connected across the memory cell and the mirror circuit branch and is configured to monitor a current flowing through the memory cell in real time.

Read and write circuit of three-dimensional phase-change memory

A non-volatile Boolean logic circuit based on memristors and an operation method, which performs logic operations on the input logic value P and/or the input logic value Q. The logic circuit includes: a controller, a memristor M, a memristor Mand a resistor. The controller sets the memristor Mto a high resistance state before performing the logic operation. When performing the logic operation, a voltage A is applied to the memristor M, a voltage B is applied to the memristor M, a voltage C is applied to the resistor. The resistance state of the memristor Mis the result of the logic operation. When a logic operation is performed on the logic value P and the logic value Q or only on the logic value Q, the controller further sets the memristor Mto the resistance state corresponding to the logic value Q before performing the logic operation.

Non-volatile Boolean logic circuit based on memristors and operation method thereof

A read-write circuit mainly includes a read circuit and a write circuit. The write circuit comprises: a first voltage selector and a first voltage follower circuit that is electrically connected to the memristor storage array. The read-write circuit further includes a second voltage selector and a second voltage follower circuit that is electrically connected to the memristor storage array. Voltage stable following during bipolar writing is selected through the foregoing selector. Meanwhile, the reading circuit is provided with a variable resistor to select an access mode. The actual read-out voltage and the output voltage passing through the reference resistor under the same read voltage are input into a differential amplifier to obtain read-out data.

Growing community of inventors

Hubei, China

Xingsheng Wang