Xingchen Liu

Title: Innovations of Xingchen Liu in Broadband Infrared Absorption

Introduction

Xingchen Liu is a prominent inventor based in Hefei, China. He has made significant contributions to the field of materials science, particularly in the development of advanced infrared absorbers. His innovative work has garnered attention in both academic and industrial circles.

Latest Patents

One of Xingchen Liu's notable patents is titled "Broadband Infrared Absorber Based on Epsilon-Near-Zero Material." This patent describes a broadband near-infrared absorber that includes a wide-type cross-shaped gold layer, an indium tin oxide (ITO) thin film, a silicon dioxide (SiO) layer, and a hollowed-out cross-shaped gold layer arranged from top to bottom. The design features a cross-shaped gold layer with dimensions that match those of the hollowed-out counterpart, while differing in thickness. This innovative approach enhances the efficiency of infrared absorption.

Career Highlights

Xingchen Liu is affiliated with Anhui University, where he continues to engage in cutting-edge research. His work has not only advanced the understanding of epsilon-near-zero materials but has also opened new avenues for applications in various technologies.

Collaborations

Xingchen Liu collaborates with esteemed colleagues, including Ming Fang and Chenran Liu. Their combined expertise fosters a dynamic research environment that promotes innovation and discovery.

Conclusion

Xingchen Liu's contributions to the field of broadband infrared absorption exemplify the impact of innovative research in materials science. His patent and ongoing work at Anhui University highlight the importance of collaboration and creativity in advancing technology.