This inventor holds 1 USPTO granted patent. Top assignee: Marvell International Limited. Active years: 2006.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2006
Title: Xin-Yi Zhang and Electrostatic Discharge Protection
Introduction
Xin-Yi Zhang is an inventor associated with Marvell International Limited and based in Cupertino, California. His patent work includes a design for electrostatic discharge protection in integrated circuits.
Latest Patents
Zhang is credited with 1 patent: “Collector Structure for Electrostatic Discharge Protection Circuits.” The invention describes an electrostatic discharge (ESD) device designed to provide more uniform breakdown across finger regions in a semiconductor substrate. Its collector region includes a highly doped middle region positioned near layers with different doping characteristics. The design can reduce the device’s breakdown voltage, and it describes eliminating a lightly doped region in the collector area while forming an interlayer insulating layer in contact with the top-side regions and middle region.
Career Highlights
Zhang’s listed patent reflects work on semiconductor device design and integrated-circuit protection. The invention addresses how collector-region structure and substrate doping can affect ESD-device breakdown behavior.
Collaborations
Zhang is associated with Marvell International Limited. His listed coworker is Choy Hing Li.
Conclusion
Xin-Yi Zhang’s patent focuses on a collector structure intended to improve breakdown behavior in ESD protection circuits, highlighting his contribution to semiconductor and integrated-circuit technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile