Xin Wang

Title: Innovations by Inventor Xin Wang

Introduction

Xin Wang is a notable inventor based in New York, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on enhancing the performance of CMOS integrated circuits.

Latest Patents

One of Xin Wang's latest patents is titled "Method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area." This invention discloses a gate stack for an NMOS transistor in an integrated circuit that induces tensile stress in the NMOS channel. The gate stack comprises a first layer of undoped polysilicon, a second layer of n-type polysilicon to establish a desired work function, a layer of compressively stressed metal, and a third layer of polysilicon for subsequent formation of metal silicide. Candidates for the compressively stressed metal include TiN, TaN, W, and Mo. In a CMOS IC, the n-type polysilicon layer and metal layer are patterned in NMOS transistor areas, while the first and third polysilicon layers are patterned in both NMOS and PMOS transistor areas. Polysilicon CMP may be utilized to reduce topography between the NMOS and PMOS gate stacks, facilitating gate pattern photolithography.

Another significant patent is the "Method to enhance channel stress in CMOS processes." This invention provides a method for fabricating a semiconductor device that enhances the stress transmitted to the channel region, thereby improving carrier mobility. In one embodiment, an amorphous region is formed at or near the gate dielectric interface prior to source/drain anneal. In another embodiment, the gate material is amorphous as deposited, and processing temperatures are maintained below the gate material's crystallization temperature until stress enhancement processing is completed. The amorphous gate material deforms during high-temperature anneal, converting from an amorphous to a polycrystalline phase, which allows more stress to be transmitted into the channel region. This process enhances carrier mobility and improves transistor drive current.

Career Highlights

Xin Wang is currently employed at Texas Instruments Corporation, where he continues to innovate in semiconductor technology. His work has had a profound impact on the efficiency and performance of integrated circuits.

Collaborations

Xin has collaborated with several talented individuals in his field, including Zhiqiang (Jeff)