San Antonio, TX, United States of America

Xihua He

This inventor holds 1 USPTO granted patent. Top assignee: Southwest Research Institute. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xihua He. Retrieved from https://idiyas.com/inventor/xihua-he

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Xihua He: Innovator in Metallic Substrate Hydriding

Introduction

Xihua He is a notable inventor based in San Antonio, TX (US). He has made significant contributions to the field of materials science, particularly in the area of metallic substrates and hydrogen adsorption.

Latest Patents

Xihua He holds a patent for a method titled "Hydriding of Metallic Substrates." This innovative method focuses on accelerated hydriding of metallic substrates to evaluate the effects of hydrogen adsorption on substrate performance. The process involves applying a metal with a lower activation energy for hydrogen adsorption to the substrate, followed by hydriding and assessment of the mechanical properties of the substrate.

Career Highlights

He is currently associated with the Southwest Research Institute, where he continues to advance research in his field. His work has implications for various applications, including energy storage and materials engineering.

Collaborations

Xihua He collaborates with Maoqi Feng, contributing to the advancement of their research initiatives.

Conclusion

Xihua He is a prominent inventor whose work on metallic substrates and hydrogen adsorption showcases his innovative spirit and dedication to advancing materials science. His contributions are paving the way for future developments in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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