This inventor holds 1 USPTO granted patent and 7 published patent applications. Top assignee: Xiamen San'an Integrated Circuit Co., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Xiguo Sun: Innovator in High Electron Mobility Transistor Technology
Introduction
Xiguo Sun is a prominent inventor based in Fujian, China. He is known for his contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work has led to advancements in electronic devices and applications.
Latest Patents
Xiguo Sun holds a patent for a "High electron mobility transistor device and method of making the same." This patent describes an HEMT device that includes a substrate, a buffer layer, a channel layer, and a barrier layer arranged in a specific order. The device features a source electrode and a drain electrode positioned oppositely on an active region, along with a gate electrode that incorporates a unique comb structure. The comb structure consists of a comb stem portion and multiple comb tooth portions, which are irregularly spaced in the gate width direction. The design allows for enhanced performance and efficiency in electronic applications.
Career Highlights
Xiguo Sun is affiliated with Xiamen San'an Integrated Circuit Co., Ltd., where he continues to innovate in the field of integrated circuits. His work has significantly impacted the development of advanced electronic components.
Collaborations
He has collaborated with notable colleagues, including Shenghou Liu and Wenbi Cai, contributing to various projects and advancements in semiconductor technology.
Conclusion
Xiguo Sun's contributions to high electron mobility transistor technology exemplify his dedication to innovation in the semiconductor industry. His work continues to influence the development of efficient electronic devices.