Suzhou, China

Xiaoning Zhan

USPTO Granted Patents = 1 

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2024

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Innovations of Xiaoning Zhan in Semiconductor Technology

Introduction

Xiaoning Zhan is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on enhancing the manufacturing processes of semiconductor devices.

Latest Patents

Xiaoning Zhan holds a patent for a semiconductor device and its manufacturing method. The patent describes a method that involves creating a semiconductor material layer with two laminated semiconductor layers, separated by an etching transition layer. This method allows for precise control over the depth of the trench etched in the semiconductor material, thereby preventing surface damage and ensuring the electrical characteristics of the device remain stable.

Career Highlights

Zhan is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technologies. His work has been instrumental in advancing the manufacturing techniques used in the semiconductor industry.

Collaborations

Xiaoning Zhan collaborates with notable colleagues, including Qian Sun and Shuai Su. Their combined expertise contributes to the innovative projects undertaken at the Chinese Academy of Sciences.

Conclusion

Xiaoning Zhan's contributions to semiconductor technology exemplify the importance of innovation in enhancing manufacturing processes. His patent reflects a commitment to improving device performance and reliability.

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