IDiyas

For the Inventor, By the Inventor

Manhattan Beach, CA, United States of America

Xiaobing Mei

USPTO Granted Patents = 4

 

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Manhatten Beach, CA (US) (2012)
  • Manhattan Beach, CA (US) (2010 - 2022)

Company Filing History:

goldMedal3 out of 3,381 
 
Northrop Grumman Systems Corporation
 patents
silverMedal1 out of 28 
 
Northrop Grumman Space & Mission Systems Corporation
 patents

Years Active: 2010-2022

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4 patents (USPTO):Explore Patents
1. 11309412 - Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring (2022-04-19),
2. 9583589 - Self-aligned double gate recess for semiconductor field effect transistors (2017-02-28),
3. 8304916 - Half-through vias for suppression of substrate modes (2012-11-06),
4. 7709860 - High electron mobility transistor semiconductor device and fabrication method thereof (2010-05-04),
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