Xiaobing Mei

Title: Xiaobing Mei: Innovator in High Electron Mobility Transistors

Introduction

Xiaobing Mei is a prominent inventor based in Manhattan Beach, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in high electron mobility transistors (HEMTs). With a total of 4 patents to his name, Mei's work has advanced the capabilities of electronic devices.

Latest Patents

One of Xiaobing Mei's latest patents is titled "Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring." This invention involves a HEMT device that includes a substrate and multiple semiconductor layers. The device features a metal ring that shifts the pinch-off voltage, enhancing its performance. The metal ring comprises an ohmic portion and an electrode portion, each consisting of a lower titanium layer, a middle platinum layer, and an upper gold layer.

Another notable patent is "Self-aligned double gate recess for semiconductor field effect transistors." This method outlines a process for fabricating a double-recess gate structure for a field-effect transistor (FET) device. The process includes several steps, such as depositing an EBL resist layer, patterning it, and performing etching to create recesses for the gate terminal.

Career Highlights

Xiaobing Mei has worked with notable companies in the aerospace and defense sectors, including Northrop Grumman Systems Corporation and Northrop Grumman Space & Mission Systems Corporation. His experience in these organizations has allowed him to apply his innovative ideas in practical applications.

Collaborations

Throughout his career, Xiaobing Mei has collaborated with talented individuals such as Wayne Yoshida and Po-Hsin Liu. These partnerships have contributed to the development of advanced technologies in the semiconductor field.

Conclusion

Xiaobing Mei's contributions to the field of high electron mobility transistors and semiconductor technology are noteworthy. His innovative patents and collaborations reflect his commitment to advancing electronic device performance.